Renesas has introduced 100V high-power N-Channel MOSFETs that claim to deliver industry-leading high-current switching performance. Renesas has developed a new MOSFET wafer manufacturing process ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process, reducing on-resistance by 30%.

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

SiC and GaN advances used improved device structures and higher levels of integration to support higher voltages and power ...

Electronic Design's Lee Goldberg chronicles a year of remarkable advances in power, power-conversion and power-management ICs ...

California Golden Bears @ N. Carolina Tar Heels Current Records ... The dominant performance also gave Washington a new career-high in offensive rebounds (six). N. Carolina was working as a ...

the company has strengthened its MOSFET technology. These devices are specifically designed for 48VDC motors employed in industrial equipment, data centres, and servers. These products feature a 100V ...

Based on the Boltzmann limit, a conventional MOSFET in today's ICs requires at least 60 mV of gate voltage to increase the current by ... is a gated p‐i‐n reverse‐biased diode, in which carriers' ...

Wolfspeed introduced its Gen 4 SiC MOSFET platform, supporting long-term roadmaps for high-power, application-optimized ...

(NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in durability and efficiency, all while reducing system ...