Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process, reducing on-resistance by 30%.

today introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems ...

Mostly-Analog editor Andy Turudic takes a look at the original 1963 ISSCC paper that described the world’s first CMOS process with planar P- and N-type MOSFETs. The first CMOS chip was created ...

Renesas Launches New MOSFETs & New Manufacturing Process Renesas Electronics Corporation has launched 100V high-power N-Channel MOSFETs, offering top-tier high-current switching performance for ...

Torex Semiconductor Ltd. has released the power MOSFETs XPJ101N04N8R and XPJ102N09N8R as part of a new series of power devices. In recent years, the demand for lowered power consumption, ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Then a correlation range of 45–60% between effective injection velocity and low-field mobility is established experimentally in sub-50-nm-channel MOSFETs. All of these factors point to the possibility ...

ROHM has developed the 32-bit D/A converter IC (DAC chip) and evaluation board designed for flagship models in the MUS-IC[tm] series optimized for high-resolution audio playback.

Based on a new manufacturing process, the split-gate MOSFETs developed by Renesas show significant improvements in power ...