Nexperia has introduced four 40V bi-directional GaN power transistors. With 5V gate drive, maximum on-resistance values of 1.2, 4.8, 8 or 12mΩ are available – see table below – and operation is up to ...

Power Transistor Market · GlobeNewswire Inc. Dublin, Jan. 29, 2026 (GLOBE NEWSWIRE) -- The "Power Transistor Market Report 2026" has been added to ResearchAndMarkets.com's offering. The report ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...

Shrinking chips are hitting a wall. Traditional transistors, the workhorses of modern electronics, are struggling to switch faster without guzzling power. A rival design, the tunnel field-effect ...