His solution is to add a P channel MOSFET which only allows power to flow when the polarity of the source voltage is correct. The schematic above shows the P-FET on the high side of the circuit.

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Instead of being a sandwich, MOSFETs have a channel of either N- or P- type semiconductor running through a ridge on top of the other type. As a voltage is applied to this channel, it creates an ...

Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process, reducing on-resistance by 30%.

today introduced new 100V high-power N-Channel MOSFETs that deliver industry-leading high-current switching performance for applications such as motor control, battery management systems ...

Renesas has developed a new MOSFET wafer manufacturing process (REXFET-1) that enables the new devices to drastically reduce ...