Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...
Renesas 100-V N-channel MOSFETs leverage an improved wafer manufacturing process, reducing on-resistance by 30%.
Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...
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