Northrop Grumman researchers have produced and demonstrated a transistor that has a maximum frequency of operation of more than 1,000 GHz. The device is an indium phosphide-based High Electronic ...

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A 28-V, 5-W class high electron mobility transistor (HEMT) from Nitronex now operates at frequencies that fall between 5.1 GHz to 5.2 GHz and 5.7 GHz to 5.8 GHz. The NPTB00004 gallium nitride on ...

Researchers from IBM (East Fishkill, NY) and Georgia Institute of Technology (Atlanta, GA) recently announced an SiGe transistor operating above 500 GHz claimed 250 times faster than the average ...

EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. EPC recently introduced the EPC2106, an enhancement-mode monolithic GaN transistor half bridge. By ...

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